Picture of Dual Beam FIB-SEM
Current status:
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
11_AEMIS User Facility: Advanced Electron Microscopy, Imaging and Spectroscopy
You must be logged in to view files.

FEI Helios NanoLab 450S DualBeam - FIB with UHREM FEG-SEM

The FEI Helios G2 NanoLab 450S is a highly versatile tool that combines a scanning electron microscope (SEM) with a focused ion beam (FIB) - Gallium. The SEM operates with a field emission gun (FEG) that provides high beam intensity and stability and allows for high resolution, down to approximately 1 nm (0.8 nm at 15 kV). The electron acceleration voltage ranges from 1 - 30 kV.

The FIB operates from 1 to 30 kV and allows a resolution of 4 nm at 30 kV.

Secondary (for SEM and FIB) and backscattered (for SEM) electrons can be detected. Apart from that, FEI Helios 450S has a STEM detector with 0.8 nm of resolution (at 30 kV).

For element analysis and mapping an EDX detector is available.

Two stages are available inside the chamber of the microscope: Ultra High Resolution (UHR) stage and Flip stage. UHR stage allows x-y-z, rotational and tilting movements. Flip stage is used for lamellas preparation.

Loadlock chamber allows a quick loading/unloading of the samples (120 seconds), since it is not necessary to vent/pump the whole chamber. Additionally, it reduces the contamination level inside the chamber.

Omniprobe 200 nanomanipulator is used for TEM sample preparation. In particular for in-situ lamella lift out from bulk sample and their attachment to TEM grids. TEM sample preparation can be semi automatized with “Auto TEM” software.

Gas injection systems (GIS) installed give the microscope the capabilities of Platinum deposition, Tungsten deposition, Enhanced etching (Iodine) and Selective Carbon Etching (MgSO4 · 7H2O).

A Charge Neutralizer for compensating the positive charge of Gallium ions is available in this tool.

The microscope has also the capability of performing 3D reconstructions by “Slice and View” technique.


Main specifications:

  • High resolution at 1 kV (e-beam): 0.895 nm
  • High resolution at 15 kV (e-beam): 0.690 nm
  • High resolution at 30 kV (i-beam): 4.039 nm
  • STEM resolution at 30 kV: 0.803 nm
  • Gas Injection Systems (GIS) available: Tungsten deposition, Platinum deposition, Selective Carbon Etching and Enhanced Etching (Iodine)
  • Charge Neutralizer to compensate positive charge generated by i-beam
  • Auto TEM G2 Software for semiautomated lamella preparation
  • Auto Slice and View G3 Software for automated data acquisition and subsequent 3D reconstruction

Installation: January 2012

Tool name:
Dual Beam FIB-SEM
04.00. High Accuracy Labs
FEI Europe B.V.
Helios Nanolab 450S
Booking type:


Licensed Users

You must be logged in to view tool modes.