The SPTS ICP is a system dedicated for Al etching but will also etches TiW, TiN and Al2O3 layers.
It is capable of etching deep sub-micron features with near vertical sidewalls and provides good selectivity over the stopping layers and masks used.
Helium gas is used for aiding backside cooling of the substrate.
This system consists of the following:
Single wafer loadlock (LPX) ;
One process chamber;
Mechanical and Turbo Pumps;
Distribution E-Rack with:
3000KW 13.56MHz RF Power Supply on source generator (Coil);
600W 13.56 MHz RF Power Supply on lower electrode generator (Platen);
De-ionized water chiller;
Gas cabinet with MFC’s for: Ar, HBr, O2; Cl2, BCl3 and CF4;
Electrostatic clamping system (TD-ESC) and wafer Helium substrate backside cooling.